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High-Resolution Lithography

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  • DWL 66+ High-Resolution Laser Lithography
    DWL 66+ High-Resolution Laser Lithography
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    Heidelberg Instruments Heidelberg DWL 66+ High-Resolution Laser Lithography

    Ultimate Laser Lithography Tool for Research & Prototyping

    • High-Resolution Patterning: Minimum feature size down to 300 nm, outperforming traditional optical lithography.
    • Grayscale Lithography: Supports up to 1024 gray levels for 2.5D topographies (e.g., diffractive optics, micro-optics, holograms).
    • Precision Alignment:
      • Frontside Alignment Accuracy: 250 nm
      • Backside Alignment Accuracy (Optional): 1000 nm
      • 2nd Layer Overlay Accuracy: 350 nm (with High-Accuracy Option)
    • Versatile Substrate Compatibility: Supports substrates from 5 mm to 230 mm, with thickness up to 12 mm.
    • Flexible Laser Options: Choose between 405 nm (broadband resists) and 375 nm (SU-8 & i-line resists).
    • Automated Loading System (Optional): Enables high-precision wafer handling, supporting masks up to 7” and wafers up to 8”.

     

  • VPG 300 DI Maskless Direct Imaging System
    VPG 300 DI Maskless Direct Imaging System
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    Heidelberg Instruments Heidelberg VPG 300 DI Maskless Direct Imaging System

    High-Resolution Maskless Direct Imager for R&D & Prototyping

    • Maskless Direct Imaging: Write high-resolution microstructures in i-line resists without requiring photomasks.
    • Ultra-High-Speed Exposure: 100 x 100 mm² exposure in just 9 minutes.
    • Exceptional Resolution & Accuracy:
      • Minimum feature size: 500 nm
      • Edge roughness: < 40 nm
      • CD uniformity: < 60 nm
      • Alignment accuracy: Topside: 100 nm | Backside VIS/IR: ±1 µm
    • Advanced Calibration & Autofocus:
      • Real-time optical & pneumatic autofocus with 80 µm dynamic compensation.
      • Integrated metrology functions for positioning, CD uniformity, and edge roughness monitoring.
    • Multi-Mode Write System: Choose from two write modes:
      • High NA Mode: Maximum resolution for ultra-fine microstructures.
      • Lower NA Mode: Optimized for throughput and depth-of-focus (DOF) critical applications.
    • Scalable & Flexible:
      • Maximum exposure area: 300 x 300 mm².
      • Compatible with wafers up to 300 mm in size.

     

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