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Rapid Prototyping Lithography

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  • DWL 66+ High-Resolution Laser Lithography
    DWL 66+ High-Resolution Laser Lithography
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    Heidelberg Instruments Heidelberg DWL 66+ High-Resolution Laser Lithography

    Ultimate Laser Lithography Tool for Research & Prototyping

    • High-Resolution Patterning: Minimum feature size down to 300 nm, outperforming traditional optical lithography.
    • Grayscale Lithography: Supports up to 1024 gray levels for 2.5D topographies (e.g., diffractive optics, micro-optics, holograms).
    • Precision Alignment:
      • Frontside Alignment Accuracy: 250 nm
      • Backside Alignment Accuracy (Optional): 1000 nm
      • 2nd Layer Overlay Accuracy: 350 nm (with High-Accuracy Option)
    • Versatile Substrate Compatibility: Supports substrates from 5 mm to 230 mm, with thickness up to 12 mm.
    • Flexible Laser Options: Choose between 405 nm (broadband resists) and 375 nm (SU-8 & i-line resists).
    • Automated Loading System (Optional): Enables high-precision wafer handling, supporting masks up to 7” and wafers up to 8”.

     

  • µMLA Maskless Lithography System
    µMLA Maskless Lithography System
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    Heidelberg Instruments Heidelberg µMLA Maskless Lithography System

    Compact Maskless Lithography System for High-Precision Microstructuring

    • High-Resolution Maskless Lithography: No mask required—direct-write exposure ensures efficient and cost-effective fabrication.
    • Flexible Exposure Modes:
      • Raster Scan Mode: Consistent high-speed writing regardless of pattern density.
      • Vector Scan Mode: Ideal for curved structures, delivering smooth, continuous lines.
    • Compact & Small Footprint: 25″ x 33″ x 21″ (640 mm x 840 mm x 530 mm) – fits on a standard lab workbench.
    • Fast Exposure Speeds: A 4″ wafer can be exposed in just 90 minutes.
    • Advanced Optical Configurations: Min. resolution of 0.6 µm, 1 µm, and 3 µm, with variable resolution options.
    • High-Precision Alignment:
      • Edge roughness: Raster mode: 100 nm, Vector mode: 30 nm
      • CD uniformity: 200 nm
    • Upgradable Exposure Area: Expand from 100 x 100 mm² to 150 x 150 mm².
    • Glovebox Integration: Compatible for patterning sensitive materials in controlled environments.

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