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Tabletop Lithography Machine

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  • MLA 150 Maskless Lithography
    MLA 150 Maskless Lithography
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    Heidelberg Instruments Heidelberg MLA 150 Maskless Lithography

    High-Speed Maskless Lithography for R&D & Rapid Prototyping

    • Fastest Maskless Lithography System: 150 mm wafer exposed in under 16 minutes.
    • High-Resolution Patterning:
      • Edge roughness: 60 nm
      • CD uniformity: 100 nm
      • 40 nm address grid
    • Flexible Write Modes:
      • High-Resolution Mode: 500 nm lines & spaces (375 nm wavelength).
      • High-Aspect Ratio Mode: Up to 1:20 aspect ratio, ideal for microfluidics and MEMS
    • Scalable & Modular:
      • Exposure area upgradable from 150 x 150 mm² to 200 x 200 mm².
      • Substrate sizes range from 3” to 6” (up to 8” on request).
    • Energy-Efficient & Long-Lasting:
      • Solid-state laser light sources with 10-20 year lifespan.
      • Low operational and maintenance costs.
    • Seamless Integration in Multi-User Facilities:
      • Less than 1-hour training required for full user qualification.
      • Automatic front & backside alignment with real-time autofocus.
  • µMLA Maskless Lithography System
    µMLA Maskless Lithography System
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    Heidelberg Instruments Heidelberg µMLA Maskless Lithography System

    Compact Maskless Lithography System for High-Precision Microstructuring

    • High-Resolution Maskless Lithography: No mask required—direct-write exposure ensures efficient and cost-effective fabrication.
    • Flexible Exposure Modes:
      • Raster Scan Mode: Consistent high-speed writing regardless of pattern density.
      • Vector Scan Mode: Ideal for curved structures, delivering smooth, continuous lines.
    • Compact & Small Footprint: 25″ x 33″ x 21″ (640 mm x 840 mm x 530 mm) – fits on a standard lab workbench.
    • Fast Exposure Speeds: A 4″ wafer can be exposed in just 90 minutes.
    • Advanced Optical Configurations: Min. resolution of 0.6 µm, 1 µm, and 3 µm, with variable resolution options.
    • High-Precision Alignment:
      • Edge roughness: Raster mode: 100 nm, Vector mode: 30 nm
      • CD uniformity: 200 nm
    • Upgradable Exposure Area: Expand from 100 x 100 mm² to 150 x 150 mm².
    • Glovebox Integration: Compatible for patterning sensitive materials in controlled environments.

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