Heidelberg Instruments

Heidelberg Instruments is dedicated to producing leading-edge solutions for micro- and nanofabrication which meet the specific Direct Write Lithography requirements of our customers, with whom we form long-lasting partnerships by helping them deliver specific applications for today and for the world of tomorrow, while also supporting system solutions throughout their product lifetimes.

To remain at the forefront of our industry, we continuously expand our vast knowledge in micro- and nanofabrication and work hard to advance our specialized engineering skills in mechanics, electronics, optics and software development. This combined unique expertise enables us to develop exclusive solutions that outperform conventional lithography machinery and empower our customers.

 

Heidelberg Instruments and Spectra Research Corporation

 

At Heidelberg Instruments, we are committed to constantly redefining the limits of laser lithography and exploring new methods of micro- and nanotechnology.

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  • High-Precision Grayscale Lithography Systems for Micro-Optics & More

    • Minimum Feature Size: 500 nm
    • Write Modes: Five options with variable write speeds and resolutions
    • Max Substrate Size: DWL 2000 GS: 200 x 200 mm², DWL 4000 GS: 400 x 400 mm²
    • Exposure Speed: Up to 1000 mm²/min in grayscale mode
    • Automation Ready: Loading system, carrier station, pre-aligner & scanner options available

     

  • Ultimate Laser Lithography Tool for Research & Prototyping

    • High-Resolution Patterning: Minimum feature size down to 300 nm, outperforming traditional optical lithography.
    • Grayscale Lithography: Supports up to 1024 gray levels for 2.5D topographies (e.g., diffractive optics, micro-optics, holograms).
    • Precision Alignment:
      • Frontside Alignment Accuracy: 250 nm
      • Backside Alignment Accuracy (Optional): 1000 nm
      • 2nd Layer Overlay Accuracy: 350 nm (with High-Accuracy Option)
    • Versatile Substrate Compatibility: Supports substrates from 5 mm to 230 mm, with thickness up to 12 mm.
    • Flexible Laser Options: Choose between 405 nm (broadband resists) and 375 nm (SU-8 & i-line resists).
    • Automated Loading System (Optional): Enables high-precision wafer handling, supporting masks up to 7” and wafers up to 8”.

     

  • High-Speed Maskless Lithography for R&D & Rapid Prototyping

    • Fastest Maskless Lithography System: 150 mm wafer exposed in under 16 minutes.
    • High-Resolution Patterning:
      • Edge roughness: 60 nm
      • CD uniformity: 100 nm
      • 40 nm address grid
    • Flexible Write Modes:
      • High-Resolution Mode: 500 nm lines & spaces (375 nm wavelength).
      • High-Aspect Ratio Mode: Up to 1:20 aspect ratio, ideal for microfluidics and MEMS
    • Scalable & Modular:
      • Exposure area upgradable from 150 x 150 mm² to 200 x 200 mm².
      • Substrate sizes range from 3” to 6” (up to 8” on request).
    • Energy-Efficient & Long-Lasting:
      • Solid-state laser light sources with 10-20 year lifespan.
      • Low operational and maintenance costs.
    • Seamless Integration in Multi-User Facilities:
      • Less than 1-hour training required for full user qualification.
      • Automatic front & backside alignment with real-time autofocus.
  • High-Speed Maskless Lithography for Industrial Volume Production

    • High-Throughput Industrial Production: Supports wafers up to 300 x 300 mm² with sub-micron precision.
    • 1.5 µm Minimum Feature Size: Offers high resolution and uniformity for demanding applications.
    • Dynamic Autofocus & Distortion Correction: Ensures perfect patterning even on warped or corrugated substrates.
    • Full Automation & MES Integration: Seamless connection with SECS/GEM and OPC-UA protocols.
    •  Flexible Write Modes:
      • Standard Write Mode: 1.5 µm resolution for fine-feature lithography.
      • High-Throughput Mode: 3 µm resolution for faster exposure and mass production.
    • Eliminates Mask-Related Costs: Faster turnaround time and higher design flexibility.

     

  • High-Resolution, Modular Nanolithography Tool for Advanced Research

    • High-Resolution Nanopatterning: 15 nm lateral features, <2 nm vertical resolution.
    • Markerless Overlay & Stitching: 25 nm alignment accuracy without markers.
    • Damage-Free Lithography: No charged particles or proximity effects, ensuring clean lift-off and etching compatibility.
    • Hybrid t-SPL & DLS Lithography: Fast large-area patterning with laser sublimation (DLS) and high-resolution nanoscale writing with t-SPL.
    • Parallel Writing with Decapede Module: 10 cantilevers for increased throughput while maintaining high resolution.
    • Automated Workflow & Scripting: Python-based automation, real-time imaging, and closed-loop corrections.
    • Versatile Process Compatibility: Works with standard pattern transfer methods, including lift-off, etching, and molding.

     

  • High-Resolution Maskless Direct Imager for R&D & Prototyping

    • Maskless Direct Imaging: Write high-resolution microstructures in i-line resists without requiring photomasks.
    • Ultra-High-Speed Exposure: 100 x 100 mm² exposure in just 9 minutes.
    • Exceptional Resolution & Accuracy:
      • Minimum feature size: 500 nm
      • Edge roughness: < 40 nm
      • CD uniformity: < 60 nm
      • Alignment accuracy: Topside: 100 nm | Backside VIS/IR: ±1 µm
    • Advanced Calibration & Autofocus:
      • Real-time optical & pneumatic autofocus with 80 µm dynamic compensation.
      • Integrated metrology functions for positioning, CD uniformity, and edge roughness monitoring.
    • Multi-Mode Write System: Choose from two write modes:
      • High NA Mode: Maximum resolution for ultra-fine microstructures.
      • Lower NA Mode: Optimized for throughput and depth-of-focus (DOF) critical applications.
    • Scalable & Flexible:
      • Maximum exposure area: 300 x 300 mm².
      • Compatible with wafers up to 300 mm in size.

     

  • Compact Maskless Lithography System for High-Precision Microstructuring

    • High-Resolution Maskless Lithography: No mask required—direct-write exposure ensures efficient and cost-effective fabrication.
    • Flexible Exposure Modes:
      • Raster Scan Mode: Consistent high-speed writing regardless of pattern density.
      • Vector Scan Mode: Ideal for curved structures, delivering smooth, continuous lines.
    • Compact & Small Footprint: 25″ x 33″ x 21″ (640 mm x 840 mm x 530 mm) – fits on a standard lab workbench.
    • Fast Exposure Speeds: A 4″ wafer can be exposed in just 90 minutes.
    • Advanced Optical Configurations: Min. resolution of 0.6 µm, 1 µm, and 3 µm, with variable resolution options.
    • High-Precision Alignment:
      • Edge roughness: Raster mode: 100 nm, Vector mode: 30 nm
      • CD uniformity: 200 nm
    • Upgradable Exposure Area: Expand from 100 x 100 mm² to 150 x 150 mm².
    • Glovebox Integration: Compatible for patterning sensitive materials in controlled environments.

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